To provide a technology for much highly precisely reproducing the electric characteristics of a semiconductor device in executing circuit simulation.

A device parameter to be used for circuit simulation is generated by a method shown by following steps: a step (a) for reading a plurality of device characteristic measurement data for every temperature; a step (b) for generating a device model parameter of every temperature based on a semiconductor device model and the plurality of device characteristic measurement data; a step (c) for extracting a non-temperature dependency parameter which is not corresponding to temperature dependency from the device model parameter of every temperature; and a step (d) for generating a parameter calculation formula to be provided as the functions of temperature based on the non-temperature dependency parameter, and for generating a device model parameter in the intermediate temperature of a plurality of temperatures based on the model parameter calculation formula.

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