Title:
CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING DEVICE
Document Type and Number:
Japanese Patent JP2006165317
Kind Code:
A
Abstract:
To provide a cleaning method of a semiconductor manufacturing device which can restrain the variation of a film formation velocity after dry cleaning while restraining damage to a chamber, in the method for cleaning a chamber inner wall of a hot wall type CVD device in repeatedly performed film formation steps.
The cleaning method of a semiconductor manufacturing device has a deposit removal step for removing deposit deposited on a chamber inner wall, and a CVD step for supplying the same material as a material constituting the chamber inner wall.
Inventors:
AISO FUMIKI
Application Number:
JP2004355473A
Publication Date:
June 22, 2006
Filing Date:
December 08, 2004
Export Citation:
Assignee:
ELPIDA MEMORY INC
International Classes:
H01L21/205; C23C16/44; H01L21/304; H01L21/3065
Domestic Patent References:
| JP2003077838A | 2003-03-14 | |||
| JPH07142391A | 1995-06-02 | |||
| JP2004247388A | 2004-09-02 |
Foreign References:
| US20020173117A1 | 2002-11-21 |
Attorney, Agent or Firm:
Kiyoshi Inagaki