Title:
CLEANING OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP3749567
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a cleaning method capable of increasing cleaning degree of a semiconductor substrate by cleaning a semiconductor substrate with an alkaline cleaning solution to which a complexing agent forming a complex together with a metal which can exist on the semiconductor substrate or in the cleaning agent is added and then cleaning the solution with ozone water.
SOLUTION: A silicon substrate surface is slightly edged by an alkaline cleaning solution obtained by adding a complexing agent to an aqueous solution obtained by mixing ammonia with hydrogen peroxide solution. Thereby, particles on the substrate surface are removed and metal pollutant is dissolved in the cleaning solution and the pollutant is taken into the complexing agent to form a complex compound and prevent re-attachment to the silicon substrate face. The substrate surface from which these particles and the metal pollutant are removed is oxidized by oxidation action of hydrogen peroxide to protect the substrate surface. The composition of the alkaline cleaning solution comprises e.g. 0.5-5wt.% NH4OH and 4-6wt.% H2O2. The complexing agent forms a complex compound together with Fe, Al, etc. The substrate surface is cleaned with an acidic cleaning solution before cleaning with ozone to remove the metal pollutant.
Inventors:
Susumu Otsuka
Kenichi Uemura
Yoshihiro Mori
Kenichi Uemura
Yoshihiro Mori
Application Number:
JP8533996A
Publication Date:
March 01, 2006
Filing Date:
April 08, 1996
Export Citation:
Assignee:
Cyltronic Japan Co., Ltd.
International Classes:
C30B33/10; H01L21/304; (IPC1-7): C30B33/10
Domestic Patent References:
| JP3219000A | ||||
| JP7094458A | ||||
| JP8069990A | ||||
| JP7014817A | ||||
| JP4026120A |
Attorney, Agent or Firm:
Mikio Hatta