Title:
飛行時間イオン検出器を用いるプラズマドーピングプロセスにおける閉ループ制御及びプロセス最適化
Document Type and Number:
Japanese Patent JP2011512655
Kind Code:
A
Abstract:
A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.
Inventors:
D. Vane M Large
Ludovic Godet
Bernard Gee Lindsey
Timothy Jay Miller
George Dee Papa Sriotis
Ludovic Godet
Bernard Gee Lindsey
Timothy Jay Miller
George Dee Papa Sriotis
Application Number:
JP2010546142A
Publication Date:
April 21, 2011
Filing Date:
February 12, 2009
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
H01L21/265; H01J49/40; H05H1/00; H05H1/46
Domestic Patent References:
| JP2009530855A | 2009-08-27 | |||
| JP2000195462A | 2000-07-14 | |||
| JP2008502145A | 2008-01-24 | |||
| JPH04276067A | 1992-10-01 | |||
| JP2006185828A | 2006-07-13 | |||
| JPH08288274A | 1996-11-01 | |||
| JP2004119753A | 2004-04-15 |
Foreign References:
| WO2007109252A2 | 2007-09-27 | |||
| WO2007106449A2 | 2007-09-20 |
Attorney, Agent or Firm:
Kenji Sugimura
British tribute
Masaaki Ishikawa
British tribute
Masaaki Ishikawa