Title:
CMP APPARATUS AND POLISHING METHOD
Document Type and Number:
Japanese Patent JP2007088041
Kind Code:
A
Abstract:
To implement high pressure polishing and highly precise low pressure polishing in the same polishing apparatus.
A CMP (chemical mechanical polishing) apparatus comprises a head 103 for holding a wafer 100, a cylinder 104 for applying pressure to the wafer 100, on which a head 103 is mounted, and an air line 105 connected to the cylinder 104. The air line 105 comprises a high pressure air line 105a for producing first polishing pressure in the cylinder 104, and a low pressure air line 105b for producing second polishing pressure smaller than the first polishing pressure in the cylinder 104.
Inventors:
SATAKE MITSUNARI
Application Number:
JP2005272238A
Publication Date:
April 05, 2007
Filing Date:
September 20, 2005
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/304; B24B37/005
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura