To provide a coating apparatus and a coating method which allows minimization of the temperature variation irrespective of different types of wafers when a film is formed on them.

According to the type of a silicon wafer 101 to be deposed, a second member 107 suitable for providing a uniform temperature variation in the surface of the silicon wafer 101 is selected, transferred into a deposition chamber 102, and placed on a first member 103 thereby forming a susceptor 110. The second member 107 has a thickness which varies depending on the temperature variation across the silicon wafer 101. This arrangement allows minimization of the temperature variation in the surface of different types of the silicon wafers 101 when a film is formed on them. The storage chamber preferably includes second heating means for heating the second member.