PURPOSE: To achieve low cost, high characteristic and high reliability by forming a needle-like cathode matrix on a silicon layer on one side of a dielectric separation type silicon substrate by anisotropy etching, by reducing the inner resistance of each picture element, and whereby reducing the number of processes.

CONSTITUTION: An SOI substrate of surface orientation of (100) provided with a first silicon substrate 1 and a second silicon layer 10 adhered thereto through an SiO2 insulating layer 2, is used, and an angular-spindle-like needle matrix formed on the layer 10 is defined as a cathode 10a, while a gate electrode 4 is formed out of a metallic film formed on the same position as the end of the cathode 10a on the layer 10 through the insulating layer 3, and while each of the cathodes 10a, 4 is the electrode of the column and line corresponding to the address of a certain picture element, a glass substrate 5 having an anode 6 of a transparent conductive film and a phosphor layer 7, is sealed by low melting point glass 8 in such a way that a group of cathodes 10a on the substrate l and the anode 6 will be arranged at a fixed interval white a vacuum space 9 is maintained therebetween. The anode 6 is a common anode for all of the picture elements. The inner resistance for each picture element can thus be reduced.