COMBINED SPUTTERING TARGET AND ITS PRODUCTION

Title:

COMBINED SPUTTERING TARGET AND ITS PRODUCTION

Document Type and Number:

Japanese Patent JPH06336674

Kind Code:

A

Abstract:

PURPOSE: To produce a target contg. group IVa or Va metallic elements and capable of giving a uniform thin film.

CONSTITUTION: This target consists essentially of Al, contains one or more kinds of group IVa or Va metallic elements (M) and consists of a pair of target chips. The concn. distribution of the metallic elements M in the 2nd target chip from the face to be sputtered toward the rear side is practically reverse to that in the 1st target chip. This target is produced by casting a molten metal having the above-mentioned compsn. by bottom pouring, vertically cutting the resulting ingot along a central face between casting chillers and combining the 1st target chip using the chiller side face as the face to be sputtered with the 2nd target chip using the vertically cut face as the face to be sputtered.

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Inventors:

KAZUYASU MUTSUO
TSUKII NORIO

Application Number:

JP12652293A

Publication Date:

December 06, 1994

Filing Date:

May 28, 1993

Export Citation:

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Assignee:

HITACHI METALS LTD
YASUGI SEIMITSU KK
HITACHI LTD

International Classes:

C23C14/34; H01L21/203; (IPC1-7): C23C14/34; H01L21/203

Attorney, Agent or Firm:

Oba Mitsuru

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