PURPOSE: To improve the superpositional accuracy and dimensional accuracy in the manufacture of a master mask and exposing of a wafer by arranging regularly plural kinds of photoetching patterns on hard glass.

CONSTITUTION: AWD which are the patterns to be used in different photoetching stages for the same chip are disposed on a composite reticule 11. The other patterns except the pattern A of six pieces in the 1st line on the reticule are masked by an aperture 28 and the respective chip parts over the entire part of the wafer are exposed in the same pattern by a step and repeat system. The pattern B is then exposed and similarly the wafer is exposed in said pattern. The photoetching patterns in the respective stages can be exposed without replacing the reticule in the above-mentioned way. Since the accuracy of plural kinds of the patterns in the reticule is high, the superpositional accuracy, dimensional accuracy, etc. are improved.