PURPOSE: To obtain a high speed switching device of low power drive by respectively inserting the drain and the source of an FET between the collector and the base, and between the base and the emitter of a bipolar element.

CONSTITUTION: When a positive control voltage is applied to a gate G, an NchFET4 between the base and the collector of an element 2 is conducted to conduct the element 2. In this case, since the element 2 is shortcircuited only between the B and the C, VCE does not lower as compared with a saturated voltage, storage carrier produced in the base of the element 2 is less, its adverse influence is reduced so that the FET4 of small capacity is sufficient. When zero or negative control voltage is applied to the gate G, the FET4 is turned OFF, the PchFET5 between the B and E of the element 2 is conducted, the storage carrier in the base of the element 2 is discharged, and the FET5 may be small capacity. According to this structure, a drive circuit which has extremely less power consumption with simple structure can be obtained in combination with a bipolar transistor and the FET, and the element having small size and high efficiency can be obtained.