COMPOSITION FOR FORMING FILM, FORMATION OF FILM AND LOW- DENSITY FILM

Japanese Patent JP2001002989

A

To obtain a composition for forming a film having excellent dielectric constant characteristics, mechanical strength, etc.

This composition for forming a film comprises (A) a silane compound which is a hydrolyzate and a condensate or either of the hydrolyzate and the condensate of at least one compound selected from the group consisting of a compound of the formula, R1aSi(OR2)4-a (R1 is a hydrogen atom, a fluorine atom or a monofunctional organic group; R2 is a monofunctional organic group; and (a) is an integer of 0-2) and a compound of the formula, R3b(R4O)3-bSi-(R7)d- Si(OR5)3-cR6c (R3, R4, R5 and R6 are each the same or different and a monofunctional organic group; (b) and (c) are each the same or different and an integer of 0-2; R7 is an oxygen atom or a group of -(CH2)n; (n) is 1-6; and (d) is 0 or 1) and (B) a cyclic amine compound or its salt.

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AKIIKE TOSHIYUKI
GOTO KOHEI
YAMADA KINJI

JP17434499A

January 09, 2001

June 21, 1999

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JSR CORP

B05D3/02; C08G77/18; C08J5/18; C08J9/26; C08K5/09; C08K5/34; C08L33/04; C08L67/00; C08L69/00; C08L71/02; C08L73/02; C08L83/06; C09D183/04; C09D201/00; H01L21/312; H01L21/316; (IPC1-7): C09D183/04; B05D3/02; C08G77/18; C08J5/18; C08J9/26; C08K5/09; C08K5/34; C08L33/04; C08L67/00; C08L69/00; C08L71/02; C08L73/02; C08L83/06; C09D201/00; H01L21/312; H01L21/316

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