Title:
半導体素子のレジスト下層膜用組成物
Document Type and Number:
Japanese Patent JP4244435
Kind Code:
B2
Inventors:
Nishikawa General Rules
Hikaru Sugita
Kinji Yamada
Akio Saito
Yoshihisa Ohta
Hikaru Sugita
Kinji Yamada
Akio Saito
Yoshihisa Ohta
Application Number:
JP10368899A
Publication Date:
March 25, 2009
Filing Date:
April 12, 1999
Export Citation:
Assignee:
JSR CORPORATION
International Classes:
G03F7/11; H01L21/027; C08L83/02; C08L83/04
Domestic Patent References:
| JP7159983A | ||||
| JP4340553A |
Attorney, Agent or Firm:
Toshiaki Fukuzawa