Title:
窒化ケイ素含有基板をエッチングするための組成物および方法
Document Type and Number:
Japanese Patent JP7026782
Kind Code:
B2
Abstract:
Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.
Inventors:
Cooper, Emmanuel
Birodo, Stephen
Die, Wen-Ho
Yang, Min-Che
Tou, Shen-Han
Wu, Shin-Chen
Kim, Sean
Hong, Song Jin
Birodo, Stephen
Die, Wen-Ho
Yang, Min-Che
Tou, Shen-Han
Wu, Shin-Chen
Kim, Sean
Hong, Song Jin
Application Number:
JP2020512852A
Publication Date:
February 28, 2022
Filing Date:
September 06, 2018
Export Citation:
Assignee:
Entegris Incorporated
International Classes:
H01L21/308; H01L21/306
Domestic Patent References:
| JP2010515245A | ||||
| JP2000058500A | ||||
| JP2016029717A | ||||
| JP2012033561A | ||||
| JP2007012640A |
Foreign References:
| WO2014077199A1 | ||||
| US20130092872 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation
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