Title:
化合物半導体装置、化合物半導体装置の製造方法及び増幅器
Document Type and Number:
Japanese Patent JP7163806
Kind Code:
B2
Abstract:
A compound semiconductor device includes a semiconductor multilayer structure including an electron transit layer and an electron supply layer of a compound semiconductor; a source electrode, a gate electrode, and a drain electrode that are disposed above the semiconductor multilayer structure and are aligned in a first direction; a first insulating film that is formed on the semiconductor multilayer structure between the gate electrode and the drain electrode, and has a tensile stress; a second insulating film that is formed on the semiconductor multilayer structure between the gate electrode and the source electrode, and has a compressive stress; and a protective film that is formed between the first insulating film and the semiconductor multilayer structure, and between the second insulating film and the semiconductor multilayer structure.
Inventors:
Gozo Makiyama
Application Number:
JP2019019109A
Publication Date:
November 01, 2022
Filing Date:
February 05, 2019
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/338; H01L21/316; H01L21/336; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| JP2011023617A | ||||
| JP2007173426A | ||||
| JP2009524242A | ||||
| JP2007518265A | ||||
| JP2014072225A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito
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