Title:
化合物半導体基板およびその製造方法
Document Type and Number:
Japanese Patent JP7217715
Kind Code:
B2
Abstract:
To provide a substrate of CdTe based semiconductor generating no leak current when a high voltage is applied and having a uniform in-plane resistivity property.SOLUTION: A substrate of a compound semiconductor single crystal has a general formula of CdZnTe(0≤x<0.20), a resistivity of 1.0×10Ω cm or more at a bias voltage of 700 V. A shape of the substrate is circular, and a diameter of a circular substrate is 100 mm or more.SELECTED DRAWING: Figure 4
Inventors:
Koji Murakami
Akira Noda
Akira Noda
Application Number:
JP2020004000A
Publication Date:
February 03, 2023
Filing Date:
January 14, 2020
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
C30B29/48; C30B11/00; H01L21/477; H01L27/144; H01L31/08
Domestic Patent References:
| JP201618972A | ||||
| JP2013241289A | ||||
| JP2013256444A |
Foreign References:
| WO2006054580A1 |
Attorney, Agent or Firm:
Axis International Patent Attorney Corporation
Previous Patent: sample support
Next Patent: Apparatus, program and method for mixing signals picked up by multiple microphones
Next Patent: Apparatus, program and method for mixing signals picked up by multiple microphones