Title:
COMPOUND SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH07273024
Kind Code:
A
Abstract:
PURPOSE: To provide a compound semiconductor substrate, having a semiinsulative, compound semiconductor layer, which is formed by epitaxially growing a compound semiconductor layer on a silicon substrate.
CONSTITUTION: In the compound semiconductor substrate 1 on which a compound semiconductor layer 4 is epitaxially grown on a silicon substrate 2, a buffer later 3 is formed on the silicon substrate 2 by a compound semiconductor, on which P-type impurities of 1018 to 1020cm-3 or more are introduced, using the silicon substrate 2 having a specific resistance of 103Ω/cm or higher, and a compound semiconductor layer 4 is epitacially grown on the buffer layer 3.
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Inventors:
TACHIKAWA AKIYOSHI
SHIROU AIJI
MORIYA AKIHIRO
SHIROU AIJI
MORIYA AKIHIRO
Application Number:
JP6136094A
Publication Date:
October 20, 1995
Filing Date:
March 30, 1994
Export Citation:
Assignee:
NIPPON STEEL CORP
International Classes:
H01L21/20; (IPC1-7): H01L21/20
Attorney, Agent or Firm:
Mikio Hatta