Title:
COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3312506
Kind Code:
B2
Abstract:
PURPOSE: To provide a compound semiconductor wafer and a semiconductor device which has a high peak current density in I-V characteristics and dose not decrease the peak current density when heat is applied.
CONSTITUTION: In a semiconductor wafer wherein a tunnel junction is formed by bonding a P+ type compound semiconductor layer 13 of high carrier concentration to an N+ type compound semiconductor layer 15 of high carrier concentration, an I-layer 14 is formed between the P+ type compound semiconductor layer 13 and the N+ type compound semiconductor layer 15.
Inventors:
Yasushi Minagawa
Tsunehiro Unno
Ken Takahashi
Tsunehiro Unno
Ken Takahashi
Application Number:
JP25056194A
Publication Date:
August 12, 2002
Filing Date:
October 17, 1994
Export Citation:
Assignee:
Hitachi Cable Ltd.
International Classes:
H01L29/88; H01L31/04; (IPC1-7): H01L29/88; H01L31/04
Domestic Patent References:
| JP1192112A | ||||
| JP6260271A | ||||
| JP137060A | ||||
| JP2246284A |
Attorney, Agent or Firm:
Nobuo Kinutani