Title:
CONTACT OF SEMICONDUCTOR DEVICE AND ITS FORMING METHOD
Document Type and Number:
Japanese Patent JP2558058
Kind Code:
B2
Abstract:
PURPOSE: To prevent damages of a first conductive pattern by a method wherein there is provided a pad conductive pattern coming into electric contact with a first conductive pattern below a contact hole, and an etching preventing substance is laminated thereon so that a second conductive pattern is partially overlapped on the pad conductive pattern.
CONSTITUTION: An interlayer insulation film 44 having a contact hole 46 for exposing a first conductive pattern is laminated in a substrate 38. An etching preventing substance pattern 50A is laminated on a conductive pad 48 formed in this contact hole 46. The conductive pad 48 and conductive substance layer 52 are etched back and a second conductive pattern is formed so that a bit line pattern 52A and a pad conductive pattern 48A are partially overlapped on the etching preventing substance pattern 50A. Thereby, it is possible to prevent damages of the first conductive pattern and to minimize an occupied of an element.
Inventors:
KIN SAIKO
Application Number:
JP29980393A
Publication Date:
November 27, 1996
Filing Date:
November 30, 1993
Export Citation:
Assignee:
GENDAI DENSHI SANGYO KK
International Classes:
H01L21/768; H01L23/522; H01L21/3205; (IPC1-7): H01L21/768; H01L21/3205
Domestic Patent References:
| JP465129A | ||||
| JP63237551A | ||||
| JP63117446A | ||||
| JP61264738A | ||||
| JP3280431A | ||||
| JP50120782A | ||||
| JP3230531A | ||||
| JP442951A | ||||
| JP21981A |
Attorney, Agent or Firm:
Akihide Sugimura (5 outside)