CONTACT STRUCTURE FOR REDUCING PIXELS OF IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

Title:

CONTACT STRUCTURE FOR REDUCING PIXELS OF IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

Document Type and Number:

Japanese Patent JP2013051420

Kind Code:

A

Abstract:

To provide an image sensor which can reduce the size of pixels without decrease in a fill factor, and a method for fabricating the image sensor.

A pixel of an image sensor includes a polysilicon layer 402 and an active region 401 which need to be electrically coupled with each other in the pixel. The polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped and coupled through a buried contact 403.

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Inventors:

CHOI WOON-IL
KIM HYUNG-SIK
KIM I SHIKU

Application Number:

JP2012202933A

Publication Date:

March 14, 2013

Filing Date:

September 14, 2012

Export Citation:

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Assignee:

INTELLECTUAL VENTURESII LLC

International Classes:

H01L27/146; H01L29/41; H04N5/335; H04N5/369; H04N5/374

Domestic Patent References:

JPH0799168A	1995-04-11
JPH04162519A	1992-06-08
JP2004336016A	2004-11-25
JP2002118249A	2002-04-19

Foreign References:

US6291280B1

2001-09-18

Attorney, Agent or Firm:

Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Ayako Nakamura
Satoshi Morimoto
Kyoko Tsunoda
Yu Tanaka
Tokumoto Koichi
Atsushi Watanabe

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