PURPOSE: To make it possible to prevent the problem such as the adhesion and the like of dust to a light-receiving part generated when a photoetching operation is performed on an electrode by a method wherein the light-receiving part and a wiring pad part are connected by an impurity-doped silicon thin film.

CONSTITUTION: The contact type image sensor, consisting of the wiring pad part 7 connected to the light-receiving part 2 and the lead-out circuit formed on a substrate 5, is constructed in such a manner that the light-receiving part 2 and the wiring pad part 7 are connected by an impurity-doped silicon thin film 6. Consequently, a photoetching process, to be performed on the lower electrode and a metal wiring electrode as in the case of the close-contact type image sensor manufactured in the past, can be omitted. As a result, the problem such as adhesion of dust and the like to the light-receiving part generated following the photoetching operation performed on the electrode can be prevented.