PURPOSE: To integrate a vacuum treating process and an atmospheric treating process into the more advanced one by making the vacuum treatment be continuous with the atmospheric one in one device and, if necessary, repeating the same.
CONSTITUTION: After a load lock room 1 is evacuated, a gate valve 7b is opened. Then, a wafer is carried to a vacuum carrying room 9 which is always maintained at high vacuum, and taken therein by a carrying device 8. After the gate valve 7b is closed, a gate valve 7c is opened. Then the wafer is carried into an etching room 3 from the vacuum carrying room 9 by the carrying device 8. Then, after the gate valve 7c is closed, a dry etching treatment is applied according to prescribed conditions. Then, the wafer after the etching treatment is carried from the etching room 3 to an ashing room 4 through the vacuum treatment room 9 by the linking operation of gate valves 7c, 7d and the carrying device 8. In the ashing room 4, a resist remained on the wafer after the etching treatment is removed.
NISHIHATA KOJI
TSUBONE TSUNEHIKO
ITO ATSUSHI
TAMURA NAOYUKI
