Title:
制御回路
Document Type and Number:
Japanese Patent JP6988734
Kind Code:
B2
Abstract:
This control circuit controls the driving of a MOSFET (350) equipped with a wide-gap semiconductor. The control circuit has an off-circuit (507) for discharging a charge stored in the gate electrode (350c) of the MOSFET to a reference voltage level. The off-circuit has: an off-resistor (553) and a first off-switch (554) which are provided in first wiring (540, 551) connecting the gate electrode and the reference voltage level; and a second off-switch (555) provided in second wiring (540, 552) connecting the gate electrode and the reference voltage level.
Inventors:
Hayashi Yoshinori
Application Number:
JP2018147793A
Publication Date:
January 05, 2022
Filing Date:
August 06, 2018
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H02M1/08; H02M7/48
Domestic Patent References:
| JP2015154701A | ||||
| JP2012023899A |
Foreign References:
| WO2015025512A1 |
Attorney, Agent or Firm:
Kazuyuki Yahagi
Taihei Nonobe
Takanori Kubo
Taihei Nonobe
Takanori Kubo