Title:
COPOLYMER FOR PHOTORESIST AND ITS PRODUCTION, PHOTORESIST COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3547376
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain the subject copolymer excellent in permeability at a specific wave length, etching resistance, heat resistance and adhesiveness by bringing the copolymer to contain a specific dicarboxylate compound having an aliphatic cyclic olefin structure, a specific carboxylate and tetrafluoroethylene.
SOLUTION: A copolymer excellent in permeability at 157 nm wave length, e.g. the copolymer expressed by formula IV [R is a (substituted) 1-10C alkylene or the like; X, G, L and M are each CH2, O or the like: R* is a protecting group sensitive to an acid; i and j are each 0-2; w:x:y:z=0-85:5-90:5-90:5-90 mol%] is obtained by bringing the copolymer to contain (A) a compound of formula I, e.g. mono-2-ethyl-2(hydroxymethyl)butylbicyclo [2.2.1]hept-5-ene-2,3 dicarboxylate and (B) a compound expressed by formula II, e.g. t- butylbicyclo[2.2.1]hept-5-ene-2-carboxylate and (C) a compound expressed by formula III.
Inventors:
High dimension
Lee Nemori
White base ho
Lee Nemori
White base ho
Application Number:
JP2000244918A
Publication Date:
July 28, 2004
Filing Date:
August 11, 2000
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C08F2/02; C08F2/04; C08F214/26; C08F222/06; C08F232/00; C08F232/08; C08F234/02; C08F234/04; C08K5/00; C08L27/18; C08L35/00; C08L45/00; G03F7/004; G03F7/039; G03F7/38; H01L21/027; (IPC1-7): C08F232/00; C08F2/02; C08F2/04; C08F214/26; C08F222/06; C08F234/02; C08F234/04; C08K5/00; C08L27/18; C08L35/00; C08L45/00; G03F7/004; G03F7/039; G03F7/38; H01L21/027
Domestic Patent References:
| JP2002525683A | ||||
| JP2002543469A |
Foreign References:
| US6387589 | ||||
| WO1991000880A1 |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune