Title:
CORRECTING CIRCUIT FOR FET CHARACTERISTICS
Document Type and Number:
Japanese Patent JPS5451359
Kind Code:
A
Abstract:
PURPOSE: To vary element characteristics freely by connecting each impedance between a gate electrode and gate drain electrode in the cdharacteristic correcting circuit of a longitudinal transistor with current unsaturation characteristics of a triode type.
CONSTITUTION: Drain electrode D of FETQ0 is connected to positive power supply +V, source electrode S is to negative power supply - V, and gate electrode G is to input terminal IN via lst resistance R1. Further, the 2nd resistance R2 is connected between gate electrode G and drain electrode D, and the 3rd resistance R3 is between gate electrode G and source electrode S
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Inventors:
TOMIDOKORO SHIGERU
SUGAWARA TSUTOMU
SUGAWARA TSUTOMU
Application Number:
JP11660277A
Publication Date:
April 23, 1979
Filing Date:
September 30, 1977
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H03F1/32; H03F3/16; H03F3/34; H03F3/345; (IPC1-7): H03F1/32