Title:
CRUCIBLE FOR GROWING CRYSTAL, AND METHOD FOR GROWING CRYSTAL
Document Type and Number:
Japanese Patent JP2013018678
Kind Code:
A
Abstract:
To provide a crucible for growing a crystal and a method for growing the crystal where the crystal whose crystal orientation is equal to that of a seed crystal is grown in a high yield and a large-sized crystal is efficiently grown.
The crucible 30 used for growing the crystal by a unidirectional solidification method comprises a crystal growing portion 32 which is a chamber housing a crystal raw material and growing the crystal and a housing portion 34 for the seed crystal 40 communicating through a neck portion 38 with the crystal growing portion 32. The neck portion 38 is formed to be thinner than the housing portion 34 of the seed crystal 40.
Inventors:
HOSHIKAWA KEIGO
OBA ETSUKO
KOBAYASHI TAKUMI
OBA ETSUKO
KOBAYASHI TAKUMI
Application Number:
JP2011153526A
Publication Date:
January 31, 2013
Filing Date:
July 12, 2011
Export Citation:
Assignee:
UNIV SHINSHU
International Classes:
C30B11/00; C30B29/20
Domestic Patent References:
| JPS62167284A | 1987-07-23 | |||
| JP2011057482A | 2011-03-24 | |||
| JP2008100861A | 2008-05-01 | |||
| JP2010504274A | 2010-02-12 |
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