Title:
CRUCIBLE FOR GROWTH OF CRYSTAL, AND METHOD FOR GROWTH OF CRYSTAL
Document Type and Number:
Japanese Patent JP3934868
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a crucible for growth of a crystal and a method for growing a crystal to improve crystal quality, improve a yield, and improve a crystal growth rate.
SOLUTION: The crystal growth crucible 10 is provided on an upper surface with an opening part and formed into a square box shape consisting of four sidewalls 4, 5, 6, and 7 and a bottom wall 8, and a continuous uneven surface shape is formed on the whole surface of an external part. The continuous uneven surface shape of the external part of the crucible 10 is formed with a plurality of protrusions 11 extending vertically (longitudinally) to the bottom wall 8 being formed in parallel and continuously, and the protrusions 11 and recess grooves 12 are continuously formed in the whole surfaces of the sidewalls 4, 5, 6, and 7. Furthermore, a plurality of the protrusions 11 extending in a direction paralleling the sidewalls 4 and 6 are in parallel and continuously formed on the whole surface of the bottom wall 8. Moreover, the internal space of the crucible 10 is formed into a cube shape, the internal part is filled with a silicon material, and the silicone material is fused and cooled to effect crystal growth of a silicon ingot.
Inventors:
Junzo wakuta
Application Number:
JP2000304879A
Publication Date:
June 20, 2007
Filing Date:
October 04, 2000
Export Citation:
Assignee:
Sharp Corporation
International Classes:
C01B33/02; F27B14/10; (IPC1-7): F27B14/10; C01B33/02
Domestic Patent References:
| JP11228280A |
Attorney, Agent or Firm:
Keiichiro Saikyo
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