Title:
CRYSTAL GROWING APPARATUS
Document Type and Number:
Japanese Patent JPS5645890
Kind Code:
A
Abstract:
PURPOSE:To enhance the quality of a grown crystal by heating a semiconductor single crystal growing material in a container provided with a crystal pulling means so that the lower side of the material is maintained at the solid phase and the upper side is converted into a liq. phase. CONSTITUTION:Container 2 holding crystal growing material 3 such as Si is provided with heating means 4 composed of vertically divided means 4A, 4B. Material 3 in the upper part of container 2 is converted into liq. phase 3a by heating with upper means 4A, and material 3 in the lower part of container 2 in maintained at solid phase 3b by heating at a lower temp. with lower means 4B. Seed crystal 8 can be pulled up with chuck 9 over container 2. As a result, melt 3a can be reduced in depth (d) and the apparent viscosity of melt 3a can be increased, resulting in temp. stabilization at the single crystal growing part, melt surface stabilization and a reduction of the vol. of oxygen introduced from container 2.
More Like This:
| JP3610729 | Heater electrode structure |
| JP2015189597 | SINGLE CRYSTAL GROWING APPARATUS |
| JP3491465 | HEATER ELECTRODE STRUCTURE IN SINGLE CRYSTAL PULLING DEVICE |
Inventors:
SUZUKI TOSHIHIKO
IZAWA NOBUYUKI
OOKUBO YASUNORI
HOSHI KINJI
IZAWA NOBUYUKI
OOKUBO YASUNORI
HOSHI KINJI
Application Number:
JP8943080A
Publication Date:
April 25, 1981
Filing Date:
June 30, 1980
Export Citation:
Assignee:
SONY CORP
International Classes:
C30B15/14; C30B15/00; (IPC1-7): C30B15/00