To provide a crystal-growing furnace with a heating improvement structure having a furnace body, a supporting table, a top heater and a bottom heater.

This crystal-growing furnace with the heating improvement structure includes the furnace body 1, the support table 2, the top heater 3 and the bottom heater 4. When a silicon material around the top heater is melted, molten silicon slurry directly flows into a space between particles of the silicon material. Thus, energy absorption of an internal part of the silicon material is expedited. As a result of it, a desirable cycle is established to expedite melting of the whole silicon material in a crucible 7. The crucible is directly heated at the bottom by the bottom heater so as to save energy and time consumed by the crystal-growing furnace by enhance melting efficiency of the silicon material in the crucible. Further, since both of the top and bottom heaters are symmetrical with each other, the crucible can be uniformly heated.