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Title:
CRYSTAL GROWING METHOD OF OXIDE SUPERCONDUCTING MATERIAL
Document Type and Number:
Japanese Patent JP3031448
Kind Code:
B2
Abstract:

PURPOSE: To stably obtain a superconducting crystal having the same orientation direction as that of a speed crystal under specified conditions by bringing the speed crystal having a specified compsn. into contact with a crystal formed body having the same compsn. and larger dimension in a partially molten state and repeating crystal grow.
CONSTITUTION: A seed crystal 1 having the compsn. expressed giveral formula RE2Cu3Ox is produced an then a formed body 2 of 123 phase crystal having the same compsn. and larger dimension than the seed crystal is maintained at 1050-1200°C in a partially molten state. Then the formed body 2 is slowly cooled at 0.5-2°C/hr cooling rate while the 123 phase crystal is grown bringing the seed crystal 1 into contact with the formed body 2. Thus, the formed body 2 is changed into a crystal having the same orientation of crystallization as that of the seed crystal 1. Then a part of the obtd. crystal is again used as a seed crystal and the process above described is repeated to produce the second seed crystal larger than the first seed crystal. Further, this procedure is repeated to gradually obtain larger crystals. In formula, RE is a rare earth element and RA is an alkali element.


Inventors:
Yuichi Ishikawa
Keizo Takeuchi
Shigeo Nagaya
Naoki Hirano
Application Number:
JP20871593A
Publication Date:
April 10, 2000
Filing Date:
July 30, 1993
Export Citation:
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Assignee:
DOWA MINING CO.,LTD.
Chubu Electric Power Co., Inc.
International Classes:
C01G1/00; C01G3/00; C30B11/00; C30B11/14; H01B12/00; H01B13/00; (IPC1-7): C30B11/00; C01G1/00; C01G3/00; C30B11/14; H01B13/00
Domestic Patent References:
JP5170598A
Attorney, Agent or Firm:
Masahiko Maruoka



 
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