To provide a crystal growth method by which a crystal thin film having a low dislocation density can be easily produced; and to provide a crystal growth apparatus.
The crystal growth method for obtaining a crystal thin film comprises reacting a gaseous raw material with a liquid raw material, supplied on a substrate 18 and composed of a metal raw material and a flux and crystallizing a crystal raw material, in which the metal raw material and the gaseous raw material are each constituted of at least one element, from a mixture composed of the liquid raw material and the gaseous raw material. In the method, the temperature distribution of the crystal raw material is controlled so that the temperature of the crystal raw material is changed from a growth starting part, where crystallization of the crystal raw material starts, to the periphery of the crystal raw material on the substrate 18, and the dissolved concentration of the crystal raw material is controlled so that the dissolved concentration of the crystal raw material over the periphery of the formed crystal thin film becomes a degree of supersaturation at which the crystal can be grown.
ANDO HIROYUKI
KANETSUKI RITSUO
KADONO MASARU
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