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Title:
CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, STACKING TYPE CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE HAVING CRYSTAL THIN FILM PRODUCED BY THESE METHOD AND APPARATUS
Document Type and Number:
Japanese Patent JP2009062231
Kind Code:
A
Abstract:

To provide a crystal growth method by which a crystal thin film having low dislocation density can be produced, and to provide a crystal growth apparatus.

This invention relates to the crystal growth method for producing the crystal thin film, by supplying a liquid raw material 12c onto a substrate 6 and depositing a crystal from the liquid raw material 12c on the substrate 6, wherein a portion of the liquid raw material 12c supplied on the substrate 6 is removed from the substrate 6 by the gravity of the liquid raw material 12c, and thereafter, the crystal growth of the liquid raw material 12d remaining on the substrate 6 is started.


Inventors:
FURUKAWA KAZUHIKO
ANDO HIROYUKI
Application Number:
JP2007231992A
Publication Date:
March 26, 2009
Filing Date:
September 06, 2007
Export Citation:
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Assignee:
SHARP KK
International Classes:
C30B19/00; C30B19/04; H01L21/208
Attorney, Agent or Firm:
Kenzo Hara International Patent Office