Title:
CRYSTAL GROWING METHOD AND APPARATUS
Document Type and Number:
Japanese Patent JP2023122837
Kind Code:
A
Abstract:
To make larger a region of a melt for crystal growth formed by heating a center part of a raw material body made of a solid raw material through induction heating while cooling a circumference of the raw material body.SOLUTION: A crystal growing method causes:, a seed crystal to contact a melt at a center part on one end side (top surface) of a raw material body In a second step S102; and an induction heating object part to move from the one end side to the other end side of the raw material body while cooling a circumference of the raw material body so as to move a part where the raw material at the center of the raw material body from the one end side to the other end side of the raw material body in a third step S103. Heating of the center part of the raw material body through induction heating is performed at a frequency of the induction heating that is set to be within a range deviated from a resonance frequency of the melt so as to make temperature of the raw material body lower toward the center part in a plane perpendicular to a direction from the one end side to the other end side of the raw material body.SELECTED DRAWING: Figure 1
Inventors:
YOSHIKAWA AKIRA
KAMATA KEI
SHOJI YASUHIRO
VLADIMIR KACHURIHIN
TAKAHASHI ISAO
TOMITA TAKETOSHI
LIUDMILA GUSHCHINA
KAMATA KEI
SHOJI YASUHIRO
VLADIMIR KACHURIHIN
TAKAHASHI ISAO
TOMITA TAKETOSHI
LIUDMILA GUSHCHINA
Application Number:
JP2022026576A
Publication Date:
September 05, 2023
Filing Date:
February 24, 2022
Export Citation:
Assignee:
UNIV TOHOKU
C & A CORP
C & A CORP
International Classes:
C30B13/20; C30B29/22
Attorney, Agent or Firm:
Shigeki Yamakawa