Title:
CRYSTAL GROWTH METHOD AND CHANNEL FORMING METHOD OF MOS TRANSISTOR
Document Type and Number:
Japanese Patent JP3291845
Kind Code:
B2
Abstract:
PURPOSE: To form a crystal prescribed in planar orientation in a prescribed region by forming a region where crystal growing nuclei are different in genera tion rate through an ion implantation method and to enhance a MOS transistor in characteristics by forming its channel region on the above crystal.
CONSTITUTION: An amorphous semiconductor layer 13 is formed on an insulating layer 12 provided to a substrate 11, them an ion implanting mask 15 is formed on a prescribed region of the amorphous semiconductor layer 13, and a region 16 where no impurity is introduced is selectively provided to the topmost layer of the amorphous semiconductor layer 13 under the ion implantation mask 15 through an oblique ion implantation method. Thereafter, through a solid growth annealing treatment, a crystal grain 18 prescribed in planar orientation is selectively grown in solid phase from the region 16 where no impurity is introduced to form a crystal region 19. The crystal region 19 is irradiated with an energy beam to be fused and then recrystallized into a recrystallized region. Moreover, the channel region of a MOS transistor is formed on a crystal region or a recrystallized region.
Inventors:
Hironori Tsukamoto
Yuji Ikeda
Yuji Ikeda
Application Number:
JP16872193A
Publication Date:
June 17, 2002
Filing Date:
June 14, 1993
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/20; H01L21/265; H01L21/268; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/20; H01L21/265; H01L21/336; H01L29/786
Domestic Patent References:
| JP6140631A |
Attorney, Agent or Firm:
Kuninori Funabashi