Title:
CRYSTAL PULLING-UP METHOD AND APPARATUS THEREFOR
Document Type and Number:
Japanese Patent JPS6395195
Kind Code:
A
Abstract:
PURPOSE:To facilitate the optimization of the growth condition of a single crystal, by carrying out the growth of a single crystal from a molten raw material in an inner chamber while charging and melting a solid raw material for semiconductor in a molten raw material in an outer chamber maintained at a temperature higher than the molten raw material in the inner chamber. CONSTITUTION:An initial silicon raw material is put into a quartz crucible 13a having a partition wall 13b and is melted with a heater 11. The temperature near the surface of molten silicon in the crucible 13a is controlled in a manner that the temperature in the outer chamber is higher than the temperature in the inner chamber by >=40 deg.C. A pulling-up shaft 15 is lowered and a seed crystal 18a held by a seed chuck 15a is immersed in the molten silicon raw material in the inner chamber to start the pulling up and growth of a single crystal 18. When the single crystal 18 is grown to a prescribed diameter, the increase in the weight of the pulled up crystal is detected by a weight sensor 16 and the converted electrical signal is transmitted to a raw material charging device 14. A polycrystalline silicon raw material of a weight equal to the weight of the pulled up crystal is continuously charged to and melted in the molten raw material in the outer chamber outside of the partition wall 13b according to the signal transmitted to the raw material charging device.
Inventors:
KOJIMA MASAKATSU
OGINO MASANOBU
YAMASHITA YOJI
OGINO MASANOBU
YAMASHITA YOJI
Application Number:
JP23803486A
Publication Date:
April 26, 1988
Filing Date:
October 08, 1986
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C30B15/02; C30B15/10; H01L21/18; (IPC1-7): C30B15/02; C30B15/10; H01L21/18
Domestic Patent References:
| JPS6136197A | 1986-02-20 |
Attorney, Agent or Firm:
Eiji Morota