Title:
CRYSTAL SILICON ELEMENT, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2007043016
Kind Code:
A
Abstract:
To provide a crystal silicon element capable of extracting desired visible light efficiently by improving the crystallinity of nano Si greatly, and to provide a method for manufacturing the crystal silicon element.
The crystal silicon element comprises a silicon substrate 10 of an n-type single crystal; nano Si (p-type crystal silicon) 12 that is provided at one surface side of the silicon substrate 10 separately from the silicon substrate 10, and has the same crystal axis as that of the silicon substrate 10; transparent electrode 15 that is formed at one surface side where the nano Si (p-type crystal silicon) 12 is provided on the silicon substrate 10; and a metal electrode 16 formed at the other surface side of the silicon substrate 10.
Inventors:
HONMA HIDEO
Application Number:
JP2005228242A
Publication Date:
February 15, 2007
Filing Date:
August 05, 2005
Export Citation:
Assignee:
HITACHI MAXELL
International Classes:
H01L33/04; H01L21/20; H01L21/28; H01L33/08; H01L33/14; H01L33/16; H01L33/24; H01L33/34; H01L33/42; H01L33/44
Domestic Patent References:
| JPH11135830A | 1999-05-21 |
Foreign References:
| US6130143A | 2000-10-10 |
Attorney, Agent or Firm:
Jiro Kobe