Title:
CRYSTALLIZING METHOD OF SEMICONDUCTOR THIN-FILM
Document Type and Number:
Japanese Patent JPS6083322
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of a crystalline grain boundary at the central section of a beltlike semiconductor thin-film by interposing a thermal radiation preventive layer between the beltlike semiconductor thin-film and a heater along approximately the central section of the strip-like semiconductor thin-film and executing recrystallization. CONSTITUTION:A plurality of beltlike polycrystalline silicon thin-films 5 in 0.5mum thickness and 400-600mum width are formed on a quartz board 4 at intervals of 50mum, and an SiO2 layer 6 in 1-2mum thickness and an Si3N4 layer 7 in 500nm thickness are laminated on the thin-films 5 in succession, thus preparing a substrate 1. Mo thermal radiation preventive layers 8 in 100mum width and 200nm thickness are formed on the surface of the Si3N4 layer at approximately the central sections of the silicon thin-films 5. W, Ta, Pt, Ti, etc. may be used as a material for the thermal radiation preventive layer 8. The width of the thermal radiation preventive layer 8 must be made narrower than that of the thin-film 5.
Inventors:
TOMITA TAKASHI
Application Number:
JP19145083A
Publication Date:
May 11, 1985
Filing Date:
October 13, 1983
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L27/12; H01L21/02; H01L21/20; H01L21/324; (IPC1-7): H01L21/324; H01L21/76
Domestic Patent References:
| JPS5814524A | 1983-01-27 | |||
| JPS5797619A | 1982-06-17 |
Attorney, Agent or Firm:
Sada Ito (1 person outside)
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