Title:
Cu ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF
Document Type and Number:
Japanese Patent JP2016141863
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a cylindrical Cu-Ga alloy sputtering target formed by a simple formation method, capable of suppressing generation of chipping in a machine work, or preventing a crack.SOLUTION: A Cu-Ga alloy sputtering target is a cylindrical casting by a Cu alloy containing Ga:27.0-30.0 atom%. The casting has a two-phase coexistent structure in which a ζ-phase of the Cu alloy is dispersed into a γ-phase of the Cu alloy, and the area ratio of the ζ-phase is 5.0-70.0%, and an average divided length related to the ζ-phase is 10.0-300.0 μm.SELECTED DRAWING: None
Inventors:
KATO SHINJI
CHO SHUHIN
KOMIYAMA SHOZO
CHO SHUHIN
KOMIYAMA SHOZO
Application Number:
JP2015020060A
Publication Date:
August 08, 2016
Filing Date:
February 04, 2015
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; B22D11/00; B22D11/04; B22D11/124; B22D13/02; B22D13/10; B22D27/04; C22C9/00
Domestic Patent References:
| JP2014208877A | 2014-11-06 | |||
| JP2014019934A | 2014-02-03 | |||
| JPS6119749A | 1986-01-28 |
Foreign References:
| WO2014077110A1 | 2014-05-22 |
Attorney, Agent or Firm:
Kageyama Shuichi
Kurachi Yasuyuki
Kurachi Yasuyuki
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