Title:
電流駆動回路
Document Type and Number:
Japanese Patent JP5575162
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enable a constant current to be output from each MOS transistor for current output, without reference to distance from a power supply pad to the MOS transistor for current output.SOLUTION: In a current driving part 3, wiring (L2) for setting substrate potential is provided separately from wiring (L1) of power supply potential VDD, so that the substrate potential of a P-type MOS transistor in a driving cell can be in common, without reference to distance from a power supply pad P1 (the power supply potential VDD) to each driving cell.
Inventors:
Shin-ichi Sato
Application Number:
JP2012028747A
Publication Date:
August 20, 2014
Filing Date:
February 13, 2012
Export Citation:
Assignee:
Lapis semiconductor incorporated company
International Classes:
G09G3/30; G09F9/30; G09G3/14; G09G3/20; H01L27/32; H01L51/50; H05B44/00
Attorney, Agent or Firm:
Nakajima 淳
Kato Kazu -- full
Hiroshi Fukuda
Kato Kazu -- full
Hiroshi Fukuda