Title:
DNAセンシング方法
Document Type and Number:
Japanese Patent JP4857820
Kind Code:
B2
Abstract:
A semiconductor DNA sensing device is provided herein, which includes a detection section with a field-effect transistor including a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, the first insulating layer including silicon oxide or an inorganic oxide, a first organic monolayer formed on the first insulator layer, the first organic monolayer comprising an organic molecule having a reactive functional group, and a probe DNA containing 3 to 35 nucleotides bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker, the structure of the probe DNA/the first organic monolayer/the insulating layer/the semiconductor constituting the detection section.
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Inventors:
Tetsuya Osaka
Daisuke Niwa
Norikazu Motohashi
Daisuke Niwa
Norikazu Motohashi
Application Number:
JP2006057706A
Publication Date:
January 18, 2012
Filing Date:
March 03, 2006
Export Citation:
Assignee:
Waseda University
International Classes:
G01N27/414; G01N27/00; G01N27/416; G01N33/53; G01N37/00; H01L29/78
Domestic Patent References:
| JP2005218310A | ||||
| JP2004004007A | ||||
| JP2004101253A |
Foreign References:
| WO2003052097A1 | ||||
| WO2005090961A1 | ||||
| WO2006022370A1 | ||||
| WO2004017068A1 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Saori Shigematsu
Katsunari Kobayashi