PURPOSE: To perform the recording and reproduction of information by electron beam, by providing a recording layer composed of aluminumdoped selenium.
CONSTITUTION: The Al content of an Al-doped Se-layer being a recording layer is set to 10W5000ppm (wt.). The recording layer is formed by a method wherein an Al-layer is formed on a substrate by vapor deposition and an amorphous Se-layer is formed on said Al layer by a vapor deposition or sputtering method and both layers are subsequently heat-treated at about 50°C to the thermally diffuse Se into al. When EB is allowed to irradiate the surface of the recording layer from an electron gun 2 under such a condition that accelerated voltage is 20 kv and current density is 1×10-9A/μm2 while a recording medium 1 is rotated, the irradiated part generates phase inversion from an amorphous phase to a crystalline phase and, therefore, an EB signal is recorded. When a disc 1 rotated and EB is allowed to irradiate said disc from an electron gun 3 under such a condition that accelerated voltage is 20kv and current density is 10-11A/μm2, EB impinges against the crystallized part 8 of the recording layer 7 to generate a leak current. Since said current is amplified by an amplifier 6 and can be detected, a signal if reproduced.
HAYATA HIDEICHI
TAGAWA YOSUKE
