Title:
深紫外光源
Document Type and Number:
Japanese Patent JP5833325
Kind Code:
B2
Abstract:
In a deep-ultraviolet tight source includes sapphire substrate, a wide band gap semiconductor layer having a wavelength smaller than 300 nm, formed on the sapphire substrate, and en electron beam source for irradiating the wide band gap semiconductor layer with an electron beam. The wide band gap semiconductor layer is configured to be irradiated with the electron beam to emit deep-ultraviolet light through the sapphire substrate. A thickness t1 of the sapphire substrate satisfies: t1>=alpha·E3 is an energy of the electron beam (keV); and alpha is 1 mum/(keV)3.
Inventors:
Takahiro Matsumoto
Akira Iwayama
Akira Iwayama
Application Number:
JP2011063651A
Publication Date:
December 16, 2015
Filing Date:
March 23, 2011
Export Citation:
Assignee:
Stanley Electric Co., Ltd.
International Classes:
H01J63/02
Domestic Patent References:
| JP2003109521A | ||||
| JP2005302637A | ||||
| JP2010212458A | ||||
| JP2010198970A | ||||
| JP2009289686A | ||||
| JP2009155689A | ||||
| JP2005150261A | ||||
| JP2006127924A |
Foreign References:
| WO2011024615A1 |
Other References:
Takao Oto et al.,100mW deep-ultraviolet emission form aluminium-nitride-based quantum wells pumped bu an electron beam,Nature Photomics,2010年11月,Vol.4,767-771
SEMI M65-0306E2,Specifications for sapphire substrates to use for compound semiconductor epitaxial wafers,2006年 2月,1-11
SEMI M65-0306E2,Specifications for sapphire substrates to use for compound semiconductor epitaxial wafers,2006年 2月,1-11
Attorney, Agent or Firm:
Shozo Igarashi