Title:
MAGNETOELECTRIC TRANSDUCER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3223613
Kind Code:
B2
Abstract:
PURPOSE: To provide a Hall device which eliminates crystal distortion caused by the etching step and has a small unbalance rate, high reliability, and high sensitivity.
CONSTITUTION: A part except a magnetic sensitive part 1 and electrodes on a semiconductor substrate 4 is ion-implanted, and a distortion is given to the single crystal lattice of the substrate 4 to convert it into an insulating layer 2. Upon epitaxial growth over it, the ion-implanted part does not undergo growth of single crystals, but turns into an insulating layer 2. The magnetic sensitive part 1 and electrodes form a heterojunction which maintains satisfactory crystal lattices.
Inventors:
Ryoichi Takeuchi
Masahiko Usuda
Takashi Udagawa
Masahiko Usuda
Takashi Udagawa
Application Number:
JP34045892A
Publication Date:
October 29, 2001
Filing Date:
December 21, 1992
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
H01L21/265; G01R33/07; H01L21/762; H01L21/763; H01L43/06; H01L43/14; (IPC1-7): H01L43/06; G01R33/07; H01L21/762; H01L21/763; H01L43/14
Domestic Patent References:
| JP562691A | ||||
| JP5373084A | ||||
| JP54127292A | ||||
| JP5913385A |
Attorney, Agent or Firm:
Shinji Kakinuma
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