Title:
FORMATION OF SILICON CARBIDE COATING FILM EXCELLENT IN WEAR RESISTANCE
Document Type and Number:
Japanese Patent JP3208908
Kind Code:
B2
Abstract:
PURPOSE: To form an SiC coating film having excellent wear resistance by specifying the ratio between the numbers of C ions and Si atoms reaching the surface of an Fe-based alloy substrate per unit time when an SiC coating film is formed on the surface of the substrate by a dynamic mixing method.
CONSTITUTION: Carbon ion implantation and silicon vapor deposition are simultaneously carried out on the mirror finished surface of a carbon steel substrate by a dynamic mixing method. In this case, the ratio (C+/Si) of the amt. of carbon ions reaching the surface of the substrate to the amt. of evaporated silicon atoms reaching the surface of the substrate per unit vapor deposition time is regulated to 0.26-0.49. An intermediate layer of Fe3C is formed on the surface of the carbon steel substrate by Fe in the substrate and carbon, and a hard SiC coating film is formed on the intermediate layer. The deformation resistance of the SiC coating film to external force is increased by the presence of the intermediate layer and a carbon steel member with an SiC coating film having remarkably improved wear resistance is obtd.
Inventors:
Hiroshi Sato
Yasuaki Sugisaki
Tatsuya Yasunaga
Kazuhisa Kawata
Yasuaki Sugisaki
Tatsuya Yasunaga
Kazuhisa Kawata
Application Number:
JP7031093A
Publication Date:
September 17, 2001
Filing Date:
March 29, 1993
Export Citation:
Assignee:
KABUSHIKI KAISHA KOBE SEIKO SHO
International Classes:
C23C14/06; C23C14/22; C23C14/48; (IPC1-7): C23C14/48; C23C14/06
Domestic Patent References:
| JP2307631A |
Attorney, Agent or Firm:
Kyuichi Ueki