Title:
【発明の名称】電荷結合素子と固体撮像装置
Document Type and Number:
Japanese Patent JP3342976
Kind Code:
B2
Abstract:
PURPOSE: To provide a charge-coupled device wherein charges are prevented from being left untaken in transfer due to the height of a barrier during two- phase drive, and high-speed drive is thus possible. CONSTITUTION: An n-type CCD buried channel 2 is formed in the surface layer of a p-type silicon substrate 1 in the direction of signal charge transfer. Transfer gates 10 (11, 12, 13) are formed on the channel 2, and storage regions 2 and barrier regions 3, different in impurity concentration from one another, are formed under the gates 10, one each. In the resultant charge-coupled device, signal charges are transferred by driving the transfer gates 10 using a two-phase clock ϕ1, ϕ2. The potential of the respective storage regions 2 and barrier regions 3 is set so that the difference in potential between the storage regions 2 and the barrier regions 3 is 0.5V when 0V is applied to the transfer gates 10.
Inventors:
Nagataka Tanaka
Nobuo Nakamura
Masayuki Matsunaga
Nobuo Nakamura
Masayuki Matsunaga
Application Number:
JP30624094A
Publication Date:
November 11, 2002
Filing Date:
December 09, 1994
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/148; H01L21/339; H01L29/762; H04N5/335; H04N5/341; H04N5/369; H04N5/372; (IPC1-7): H01L21/339; H01L27/148; H01L29/762; H04N5/335
Domestic Patent References:
| JP6177172A | ||||
| JP56129761U |
Attorney, Agent or Firm:
Takehiko Suzue