PURPOSE: To enable development of high accuracy in a high yield by dropping a developer on a semiconductor wafer having a photoresist film exposed for registration in a static state to hold the developer on the whole surface of the wafer and by rinsing and drying the wafer while rotating it.

CONSTITUTION: A wafer 22 is supported on a vacuum chuck 21, and a fixed quantity of a developer is dropped on the wafer surface from a developer tube 23 attached to a developing cup 20 to hold the developer on the whole wafer surface by surface tension. At this time, the wafer 22 is in a static state. After a fixed time a rinse is sprayed from a rinse nozzle 24 to wash the wafer surface while rotating the wafer 22. No developer is scattered and stuck to the inside of the device. A resist pattern obtd. by this method is a resist pattern 33 formed on an oxide film 31 on the surface of a semiconductor substrate 30, and it has sharp and steep edge part. Development of high accuracy can be performed with high reproducibility, and since no wafer surface and no developing defects are included, a high yield is attained.