To make uniform the line widths of circuit patterns formed at a center and an outer edge of a wafer.

A development method comprises steps of moving a developing liquid discharge nozzle 80 on the wafer W while discharging a developer to supply the developer to the wafer W, and operating the rotating speed of the wafer W in a step 3 of moving the nozzle 80 from a position P2 to a position P3. In this case, the speed of the step 3 is set to a speed so that the line widths formed at the outer edge of the wafer W becomes the same as that of the center based on an experiment result executed in advance. A development advancing degree of the outer edge of the wafer W is regulated by this operation, and hence the circuit pattern of uniform line width in the wafer W is formed.