Title:
DEVICE FOR CRYSTAL GROWTH BY MOLECULAR BEAM
Document Type and Number:
Japanese Patent JPS61141119
Kind Code:
A
Abstract:
PURPOSE:To prevent contamination of a single crystal growth layer and to contrive the improvement in thermal efficiency and controllability of the temperature of the molecular beam source cell by burying a heater for heating a cell in the wall of the molecular beam source cell. CONSTITUTION:A heater is buried in a cell 1 which can be formed easily by attaching the heater 2, for example, made of tantalum to the wall which has grown half during the process for growing boron nitride (BN) into the required shape by chemical gas-phase growth and continuing the growth of BN. This heater 2 is connected to a power source for a heater and controls the temperature of the material 5 of a molecular source in the cell 1 by monitoring it by a thermocouple 4 for controlling a temperature similarly in a conventional device for crystal growth by molecular beams. A heat radiation reflective plate is not so necessary as in a conventional device, but it improves a thermal efficiency.
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Inventors:
IGARASHI TAKESHI
SAITO JUNJI
SAITO JUNJI
Application Number:
JP26337584A
Publication Date:
June 28, 1986
Filing Date:
December 13, 1984
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/20; H01L21/203; H01L21/205; (IPC1-7): H01L21/26
Domestic Patent References:
| JPS5752904U | 1982-03-27 | |||
| JPS4730540A |
Attorney, Agent or Firm:
Sadaichi Igita