To provide a correction table generating device and method for accurately correcting a process proximity effect by a rule base, a device and a method for generating a mask pattern for a correction table, a device and a method for generating a mask pattern for fine working, and a method for forming a fine working pattern.

Gate line width for a sample is measured and gate line width A most close to target line width T and the gate pattern line width B of a mask for a corresponding correction table are found out for each pattern shape using space between the gate line width and a pattern as a parameter (S2). A correction value (a) for biasing the gate pattern of the fine working mask is calculated from a difference between the gate line width A and the target line width T (S3), an additional correction value (b) is calculated from the difference between the gate line width A and the target line width T while considering an MEF calculated for each pattern shape (S4) and a final correction value (c) is calculated for each pattern shape by adding the additional correction value (b) to the correction value (a) (S5).