To provide a vapor phase epitaxy device and vapor phase epitaxy method wherein material gas can be supplied uniformly to a substrate without disturbance of the flow of gas, vapor phase epitaxy can be effected continuously without necessitating the cleaning of a reaction pipe, crystal growth can be effected under a condition coping with the growth film of a nitride compound semiconductor, crystallinity is maintained even when the semiconductor film is formed at high temperatures under reduced amount of gas, and the re-degradation of the growth crystal is prevented.

In the reaction pipe 100 having a susceptor 102 for mounting the substrate 101 and a heater 103 for heating the susceptor 102, vapor phase epitaxy is carried out at the temperature of T1+T2 by heating the susceptor at the temperature of T1 and by heating the surface of the substrate 101 by a temperature T2 further through a heating means 115.