To efficiently produce a silicon single crystal having excellent device properties by preventing metal contamination from being caused and enhancing the pulling-up rate, in the process of silicon single crystal pulling-up.

This device for producing a silicon single crystal by a Czochralski method is provided with: a graphite shielding member 8 that is a cylindrical or downwardly tapered inverted-conical member placed so as to encircle the periphery of a single crystal pulling-up zone; and a cylindrical or inverted-conical metallic reflection member 9 coaxially placed with the graphite shielding member 8; wherein the metallic reflection member 9 is covered with quartz glass 10. In the device, at the time of covering the metallic reflection member 9 with the quartz glass 10, desirably, a space is formed between them, or the metallic reflection member 9 is subjected to vacuum encapsulation. Further, the material of the metallic reflection member 9 is desirably molybdenum(Mo).